Raise electrode of can see light through rate increment light flux
Recently engineer's starting making use of ITO is transparent to conduct electricity a film, this because canning see of ITO electrode light through rate very high, and electrode material self also not the general assembly appears light absorption phenomenon and cause light exhaust, and at optics design up, oneself the refractive index is GaN the middle value of the refractive index and Mold material resin, so can significantly increase an exportation efficiency.Because the GaN department crystallizes refractive index very high, so crystallize in the 12 volt led lighting component the inner part sends out of light, don't deeply pay and is interiorly glint, is finally absorbed by the material.For example n-GaN layer/the critical corn of blue precious stone board interface is 47 degrees, the critical corn of the epitaxial resin interface of the p-GaN layer/mold material is 38 degrees, and the exportation efficiency of general LED is 30% at least.Consequently if can will give out light the 1 F emanative light to all and deeply pay of words, is very likely to can increase the LED bright degree to currently 200% above.
LED constructs to fix to turn for 12 years after gradually, the discussion concerning this aspect is rather many and included a n-GaN layer/blue precious stone board interface and p-GaN layer surface etc..In the n-GaN layer/blue precious stone board interface up, have the representative's research most is process through the interface and make optics of cave convex, and born on the concavo-convex and blue precious stone board formed crystallize.The interface makes into cave convex shape for, can significantly reduce total reflection loss like this, if is crystallizing born initial stage, is plusing to help the level direction to grow up, can reduce crystalloid drawback, and make to give out light a promoting of efficiency significant degree.
There is also operator just in the development besides, be a blue precious stone board up carry on growing crystal after, remove the technique of blue precious stone board and article interface.This because at crystallize born after will form and reflect sexual electrode, combines board material on this electrode, then removes a blue precious stone board with the Laser lift-off method, at peep out of the n-GaN layer last formation n contact electrode, certainly words like this, the resin critical corn of the interface of the n-GaN layer/mold will be smaller and make light exportation efficiency very bad, for overcoming this weakness, have to increase an optical design in the n-GaN surface, the freedom degree of design and production is all very high, so the exportation efficiency that may have a very significant degree exaltation will also have the advantage of flip chip.
In the p-GaN layer surface technique aspect, rather many operators put into a development Photonic crystallize technique currently,led lighting design so-called Photonic crystallize is at light of the wave-length periodic owns the structure that the refractive index distributes, can carry out the general material space grows can not carry out of light of application.Carry on a p-GaN layer the eclipse engrave a manufacturing process, at most surface formation Photonic crystallize, can significantly raise a light exportation efficiency, but when this is the high request very small manufacturing process technique, and just processes to the p-GaN layer will cause one p-GaN layer breakage, so still keep staying around the stage of development currently.Photonic after crystallizing a technique is found has to rather inspire us in the application of each realm of performance, always doubly is developed a technique that concerns, because mostly expect can avoid confrontation with day second chemistry of blue light LED add fluorescence powder to make technique patent.